What absorbs at 798 cm⁻¹ in an FTIR spectrum?
A band near 798 cm⁻¹ can point to several functional groups. Below are the most likely assignments, ranked by how much published evidence supports each — every one traceable to literature (DOI) and cross-validated against our 130,000+ reference spectra and knowledge graph.
Backed by 8 cited sources
可能性のある官能基アサイン
| 官能基 | 裏付け事実 | 引用元 | 最高信頼度 |
|---|---|---|---|
| Silicon-oxygen (Si-O) | 2 | 2 | 1.0 |
| Siloxane (Si-O-Si) | 1 | 1 | 0.9 |
| Hydroxyl (O-H) | 1 | 1 | 0.9 |
| Aromatic ring | 1 | 1 | 0.8 |
ランキングは蓄積された文献証拠を反映しており、単一の権威あるルールではありません。常にサンプルのコンテキストと照合して確認してください。
これらのアサインの根拠となる文献
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Silicon-oxygen (Si-O) 信頼度 1.0
“Explicit assignment in text: 'bands observed at 798 (Si-O)'”
Zhang 等 - 2012 - Surface-functionalized Hexagonal Mesoporous Silica DOI: 10.5012/bkcs.2012.33.12.4015 -
Hydroxyl (O-H) 信頼度 0.9
“Text states 'bands at 3429, 1076, and 798 which correspond to OH functional gr'”
Arizka 等 - 2019 - Synthesis and Physical Properties Characterization DOI: 10.1088/1757-899X/546/4/042004 -
信頼度 0.9
“Band around 798 cm-1 is due to out-of-plane bending.”
Saini 等 - 2009 - Polyaniline-MWCNT nanocomposites for microwave abs DOI: 10.1016/j.matchemphys.2008.08.065 -
Silicon-oxygen (Si-O) 信頼度 0.9
“Explicitly stated: 'signals at ~775 and 798 (double band) and 1164 for quartz'”
Jorda 等 - 2022 - Characterisation of clays from Alicante province ( DOI: 10.1007/s10653-021-00925-y -
Siloxane (Si-O-Si) 信頼度 0.9
“Explicit assignment: '798cm-1 was the Si-O-Si'.”
Wang 等 - 2017 - Preparation and Characterization of Manganese Slag DOI: 10.1051/matecconf/201713004006 -
信頼度 0.8
“Attributed to outward bending vibration of C-H of disubstituted benzene ring.”
Jin 等 - 2018 - Polymer anode used in hydrometallurgy Anodic beha DOI: 10.1016/j.hydromet.2018.01.020 -
信頼度 0.8
“Peak at 798 cm-1 attributed to 1,4-disubstitution.”
Li 和 Mu - 2005 - The electrochemical activity of sulfonic acid ring DOI: 10.1016/j.synthmet.2004.12.015 -
信頼度 0.8
“Strong absorption due to reststrahlen band”
Shim 等 - 1998 - Effects of void formation on electrical and optica DOI: 10.4028/www.scientific.net/MSF.264-268.195
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