Silicon silicon — FTIR-absorptions-toppe og tildelinger

Hurtigt svar

Silicon silicon tildeles normalt ved at lede efter en tilbagevendende klynge af karakteristiske toppe frem for et præcist lærebogsnummer. Tabellen nedenfor viser, hvor litteraturen oftest placerer denne gruppe i FTIR, rangeret efter akkumuleret evidens.

Karakteristiske FTIR-toppe for Silicon silicon

Viser de 30 bedst understøttede toppe ud af 44 i alt for Silicon silicon.

Mulige materialer

Spektrumlogik

En funktionel gruppetildeling bliver mere sikker, når flere forventede bånd optræder sammen. Brug denne side til at finde de bedst understøttede peaks, og bekræft derefter, at den samme prøve udviser et sammenhængende mønster snarere end et enkelt isoleret hit.

Anvendelse i virkeligheden

Disse sider er nyttige til analyse af ukendte materialer, topforklaring i rapporter, polymerfejlfinding og verifikation af, om en kandidatmaterialefamilie er kemisk plausibel.

Almindelige fejl

• Brug af én funktionel-gruppe-side som en komplet materialebedømmelse uden at kontrollere resten af spektret.
• Antager, at det stærkeste bånd altid er det mest diagnostiske.
• At glemme, at forarbejdning, tilsætningsstoffer, ældning og blandinger kan flytte eller udvide forventede toppe.

Verifikationsrådgivning

Brug DSC, GC-MS eller TGA, når flere materialefamilier deler lignende bånd, eller når blandings-effekter gør FTIR-tildelingen usikker.

Litteratur bag disse tildelinger

• 480 cm⁻¹ tillid 1,0

  “Before annealing treatments, some signature of the presence of Si-Si bonds (weak band centered at 480 cm-1 assigned to the amorphous silicon phase) are present in the spectrum of the as-grown material.”

  Evolution of Optical and Structural Properties of Silicon Nanocrystals Embedded in Silicon Nitride Films with Annealing Temperature DOI: 10.4028/www.scientific.net/JNanoR.49.163
• 980 cm⁻¹ tillid 1,0

  “7 (a) Typical absorption, transmission and reflection spectra of cm(cid:3)1 for 30and 60-s Si-Si peaks are at 979.56 and 943.58 vertical SiNWs by electroless process.”

  Synthesis and Characterization of Silicon Nanowires by Electroless Etching DOI: 10.1007/s11665-018-3179-z
• 480 cm⁻¹ tillid 1,0

  “In Raman spectrum, for amorphous phase and crystalline phase, the Si-Si TO phonon mode occurs at about 480 cm-1 and 520 cm-1, respectively.”

  Effect of Deposition Power on the Structure Properties of Microcrystalline Silicon Thin Films DOI: 10.4028/www.scientific.net/AMM.442.116
• 400 cm⁻¹ tillid 1,0

  “The weak absorption in the near infrared region (~400 cm-1) of three compounds is ascribed to Si-Si bonds.”

  Synthesis, characterization and properties of diamidodisilanes and azocyclosilane DOI: 10.1360/982004-590
• 464 cm⁻¹ tillid 1,0

  “Since in GaAs the 464 cm-1 peak corresponds to the longitudinal stretching mode of the pair [5] one can imagine that when Al atoms substitute Ga atoms nearest to the SiAs cation sites the Si-Si bond will become somewhat weaker due to an Al-”

  Kaczor 等 - 1995 - Silicon-related local vibrational mode absorption DOI: 10.4028/www.scientific.net/MSF.196-201.1091
• 411 cm⁻¹ tillid 1,0

  “The only difference between FTIR of cm-1 ZnO:Al,N ZnO:Al,N ZnO:Al,N films films films and and and Si Si Si substrate substrate substrate is is is the the the peak peak peak at at at 411 411 411 cm cm that is only seen in the films.”

  Karpyna 等 - 2020 - Raman and Photoluminescence Study of Al,N-Codoped DOI: 10.1002/pssb.201900788
• 400 cm⁻¹ tillid 1,0

  “The inset is a magnified view of Si-Si peak at the temperature of 400 ºC and 500 ºC Figure 1 shows the Raman spectra of the self-implanted sample annealed at different”

  Red Light Emission from Silicon Created by Self-Ion Implantation and Thermal Annealing DOI: 10.4028/www.scientific.net/AMM.320.109
• 614 cm⁻¹ tillid 1,0

  “LLM confirmed rule peak-group candidate”

  Ion beam induced modification and nanostructures formation in thin SiC/Pd films on c-Si substrate DOI: 10.1016/j.nimb.2021.01.018