Silicon nitrogen — FTIR-absorptions-toppe og tildelinger

Hurtigt svar

Silicon nitrogen tildeles normalt ved at lede efter en tilbagevendende klynge af karakteristiske toppe frem for et præcist lærebogsnummer. Tabellen nedenfor viser, hvor litteraturen oftest placerer denne gruppe i FTIR, rangeret efter akkumuleret evidens.

Karakteristiske FTIR-toppe for Silicon nitrogen

Viser de 30 bedst understøttede toppe ud af 32 i alt for Silicon nitrogen.

Spektrumlogik

En funktionel gruppetildeling bliver mere sikker, når flere forventede bånd optræder sammen. Brug denne side til at finde de bedst understøttede peaks, og bekræft derefter, at den samme prøve udviser et sammenhængende mønster snarere end et enkelt isoleret hit.

Anvendelse i virkeligheden

Disse sider er nyttige til analyse af ukendte materialer, topforklaring i rapporter, polymerfejlfinding og verifikation af, om en kandidatmaterialefamilie er kemisk plausibel.

Almindelige fejl

• Brug af én funktionel-gruppe-side som en komplet materialebedømmelse uden at kontrollere resten af spektret.
• Antager, at det stærkeste bånd altid er det mest diagnostiske.
• At glemme, at forarbejdning, tilsætningsstoffer, ældning og blandinger kan flytte eller udvide forventede toppe.

Verifikationsrådgivning

Brug DSC, GC-MS eller TGA, når flere materialefamilier deler lignende bånd, eller når blandings-effekter gør FTIR-tildelingen usikker.

Litteratur bag disse tildelinger

• 470 cm⁻¹ tillid 1,0

  “cm-1 The absorption bands centered at around 470, 820, 1170, 2180, and 3300 can be assigned to the Si-N symmetric stretching, Si-N asymmetric stretching, N-H bending, Si-H stretching, and NH stretching modes, respectively.”

  Evolution of Optical and Structural Properties of Silicon Nanocrystals Embedded in Silicon Nitride Films with Annealing Temperature DOI: 10.4028/www.scientific.net/JNanoR.49.163
• 490 cm⁻¹ tillid 1,0

  “LLM confirmed rule peak-group candidate”

  Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers DOI: 10.1016/j.solmat.2011.09.052
• 917 cm⁻¹ tillid 1,0

  “Fourier transform infrared (FTIR) spectroscopy cm-1 analysis showed the Si-N-Si stretching peak at 917 further, the full width at half maxima and Si-N-Si peak position showed their dependency on the deposition temperature.”

  Deposition of silicon nitride films using chemical vapor deposition for photovoltaic applications DOI: 10.1016/j.rinp.2016.11.029
• 450 cm⁻¹ tillid 1,0

  “LLM confirmed rule peak-group candidate”

  Optical and photoelectrochemical properties of nitrogen-doped a-SiC thin films deposited by reactive sputtering method at room temperature DOI: 10.1080/2374068X.2021.1890420
• 923 cm⁻¹ tillid 1,0

  “2.0 10.4 (3) Si-N stretching 923 983 - - sin3 9.2”

  Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides DOI: 10.1016/j.optmat.2003.12.004
• 849 cm⁻¹ tillid 1,0

  “cm-1, cm-1, cm-1, 912 and 961 which can be fitted by three symmetric Gaussian bands at 849 represent absorption states of the Si-N stretching mode [52-54].”

  Characterization of semiconductor materials using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy DOI: 10.1364/OE.22.017948
• 880 cm⁻¹ tillid 1,0

  “The peak at 880 is associated cm-1 with the Si-N stretching mode [25].”

  Examination of the Hydrogen Incorporation into Radio Frequency-Sputtered Hydrogenated SiNx Thin Films DOI: 10.3390/coatings11010054
• 1000 cm⁻¹ tillid 1,0

  “The absorption bands below 1000 relate to the stretching and deformation vibrations of Si-C, Si-N, C-C, and C-H bonds, which, however are overlapping and consequently cannot be accurately assigned.”

  Crosslinking Behavior of UV-Cured Polyorganosilazane as Polymer-Derived Ceramic Precursor in Ambient and Nitrogen Atmosphere DOI: 10.3390/polym13152424