Silicon nitrogen — FTIR absorption peaks and assignments
These are the characteristic FTIR wavenumbers where Silicon nitrogen tends to absorb, compiled from published literature and ranked by supporting evidence. Each assignment is traceable to a source (DOI) and cross-validated against our 130,000+ reference spectra and knowledge graph.
Backed by 8 cited sources
Quick answer
Silicon nitrogen is usually assigned by looking for a recurring cluster of characteristic peaks rather than one exact textbook number. The table below shows where the literature most often places this group in FTIR, ranked by accumulated evidence.
Characteristic FTIR peaks for Silicon nitrogen
| Wavenumber (cm⁻¹) | Supporting facts | Cited sources | Top confidence |
|---|---|---|---|
| 850 | 3 | 1 | 1.0 |
| 450 | 2 | 2 | 1.0 |
| 490 | 2 | 1 | 1.0 |
| 904 | 1 | 1 | 1.0 |
| 1162 | 1 | 1 | 1.0 |
| 1300 | 1 | 1 | 1.0 |
| 840 | 1 | 1 | 1.0 |
| 709 | 1 | 1 | 1.0 |
| 1000 | 1 | 1 | 1.0 |
| 849 | 1 | 1 | 1.0 |
| 3335 | 1 | 1 | 1.0 |
| 880 | 1 | 1 | 1.0 |
| 980 | 1 | 1 | 1.0 |
| 923 | 1 | 1 | 1.0 |
| 669 | 1 | 1 | 1.0 |
| 587 | 1 | 1 | 1.0 |
| 964 | 1 | 1 | 1.0 |
| 640 | 1 | 1 | 1.0 |
| 1180 | 1 | 1 | 1.0 |
| 917 | 1 | 1 | 1.0 |
| 700 | 1 | 1 | 1.0 |
| 1040 | 1 | 1 | 1.0 |
| 875 | 1 | 1 | 1.0 |
| 470 | 1 | 1 | 1.0 |
| 1019 | 1 | 1 | 0.9 |
| 1075 | 1 | 1 | 0.7 |
| 1150 | 1 | 1 | 0.6 |
| 1083 | 1 | 0 | 1.0 |
| 1580 | 1 | 0 | 1.0 |
| 3350 | 1 | 0 | 1.0 |
Showing the 30 best-supported peaks of 34 total for Silicon nitrogen.
Possible materials
Spectrum logic
A functional-group assignment becomes more confident when several expected bands appear together. Use this page to find the strongest-supported peaks, then confirm that the same sample exhibits a coherent pattern rather than a single isolated hit.
Real-world usage
These pages are useful for unknown material analysis, peak explanation in reports, polymer troubleshooting, and verifying whether a candidate material family is chemically plausible.
Common mistakes
- Using one functional-group page as a complete material verdict without checking the rest of the spectrum.
- Assuming the strongest band is always the most diagnostic one.
- Forgetting that processing, additives, aging, and mixtures can shift or broaden expected peaks.
Verification advice
Use DSC, GC-MS, or TGA when several material families share similar bands or when mixture effects make the FTIR assignment uncertain.
Literature behind these assignments
-
470 cm⁻¹ confidence 1.0
“cm-1 The absorption bands centered at around 470, 820, 1170, 2180, and 3300 can be assigned to the Si-N symmetric stretching, Si-N asymmetric stretching, N-H bending, Si-H stretching, and NH stretching modes, respectively.”
Benyahia 等 - 2017 - Evolution of Optical and Structural Properties of DOI: 10.4028/www.scientific.net/JNanoR.49.163 -
490 cm⁻¹ confidence 1.0
“(cm(cid:2)2) K Reference Bond Mode Wavenumber (cm(cid:2)1) symmetric stretching 490 - [15] Si-N N-Si3 Si-H Si-H wag-rocking”
Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers DOI: 10.1016/j.solmat.2011.09.052 -
917 cm⁻¹ confidence 1.0
“Fourier transform infrared (FTIR) spectroscopy cm-1 analysis showed the Si-N-Si stretching peak at 917 further, the full width at half maxima and Si-N-Si peak position showed their dependency on the deposition temperature.”
Deposition of Silicon Nitride Films using Chemical Vapor deposition for Photovoltaic Applications DOI: 10.1016/j.rinp.2016.11.029 -
450 cm⁻¹ confidence 1.0
“LLM confirmed rule peak-group candidate”
Optical and photoelectrochemical properties of nitrogen-doped a-SiC thin films deposited by reactive DOI: 10.1080/2374068X.2021.1890420 -
923 cm⁻¹ confidence 1.0
“2.0 10.4 (3) Si-N stretching 923 983 - - sin3 9.2”
Ay 和 Aydinli - 2004 - Comparative investigation of hydrogen bonding in s DOI: 10.1016/j.optmat.2003.12.004 -
880 cm⁻¹ confidence 1.0
“The peak at 880 is associated cm-1 with the Si-N stretching mode [25].”
Examination of the Hydrogen Incorporation into Radio Frequency-Sputtered Hydrogenated SiNx Thin Films DOI: 10.3390/coatings11010054 -
849 cm⁻¹ confidence 1.0
“cm-1, cm-1, cm-1, 912 and 961 which can be fitted by three symmetric Gaussian bands at 849 represent absorption states of the Si-N stretching mode [52-54].”
Hermann 等 - 2014 - Characterization of semiconductor materials using DOI: 10.1364/OE.22.017948 -
1000 cm⁻¹ confidence 1.0
“The absorption bands below 1000 relate to the stretching and deformation vibrations of Si-C, Si-N, C-C, and C-H bonds, which, however are overlapping and consequently cannot be accurately assigned.”
Crosslinking Behavior of UV-Cured Polyorganosilazane as Polymer-Derived Ceramic Precursor in Ambient and Nitrogen Atmosphere DOI: 10.3390/polym13152424
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