Silicon hydride — FTIR-absorptions-toppe og tildelinger

Hurtigt svar

Silicon hydride tildeles normalt ved at lede efter en tilbagevendende klynge af karakteristiske toppe frem for et præcist lærebogsnummer. Tabellen nedenfor viser, hvor litteraturen oftest placerer denne gruppe i FTIR, rangeret efter akkumuleret evidens.

Karakteristiske FTIR-toppe for Silicon hydride

Viser de 30 bedst understøttede toppe ud af 108 i alt for Silicon hydride.

Spektrumlogik

En funktionel gruppetildeling bliver mere sikker, når flere forventede bånd optræder sammen. Brug denne side til at finde de bedst understøttede peaks, og bekræft derefter, at den samme prøve udviser et sammenhængende mønster snarere end et enkelt isoleret hit.

Anvendelse i virkeligheden

Disse sider er nyttige til analyse af ukendte materialer, topforklaring i rapporter, polymerfejlfinding og verifikation af, om en kandidatmaterialefamilie er kemisk plausibel.

Almindelige fejl

• Brug af én funktionel-gruppe-side som en komplet materialebedømmelse uden at kontrollere resten af spektret.
• Antager, at det stærkeste bånd altid er det mest diagnostiske.
• At glemme, at forarbejdning, tilsætningsstoffer, ældning og blandinger kan flytte eller udvide forventede toppe.

Verifikationsrådgivning

Brug DSC, GC-MS eller TGA, når flere materialefamilier deler lignende bånd, eller når blandings-effekter gør FTIR-tildelingen usikker.

Litteratur bag disse tildelinger

• 470 cm⁻¹ tillid 1,0

  “cm-1 The absorption bands centered at around 470, 820, 1170, 2180, and 3300 can be assigned to the Si-N symmetric stretching, Si-N asymmetric stretching, N-H bending, Si-H stretching, and NH stretching modes, respectively.”

  Benyahia 等 - 2017 - Evolution of Optical and Structural Properties of DOI: 10.4028/www.scientific.net/JNanoR.49.163
• 2110 cm⁻¹ tillid 1,0

  “The band at 2110 corresponds to stretching vibrations of Si-H bonds [44,45].”

  Mechanical properties, chemical analysis and evaluation of antimicrobial response of Si-DLC coatings fabricated on AISI 316 LVM substrate by a multi-target DC-RF magnetron sputtering method for potential biomedical applications DOI: 10.1016/j.apsusc.2017.03.223
• 3660 cm⁻¹ tillid 1,0

  “cm-1) cm-1) 3660 and Si-H peak (observed at 2160 417 (1997) relative to Si-O-Si peak as a function of film thickness.”

  Bougharouat 等 - 2011 - Plasma polymerization of TEOS for QCM-based VOC va DOI: 10.1051/epjap/2011110144
• 640 cm⁻¹ tillid 1,0

  “118 Materials Engineering and Mechanical Automation cm-1, C Further, H content ( ) can be calculated according to the absorption intensity at about 640 H * C R which is due to the Si-H wagging mode [9].”

  Chen 等 - 2014 - Effect of Deposition Power on the Structure Proper DOI: 10.4028/www.scientific.net/AMM.442.116
• 2940 cm⁻¹ tillid 1,0

  “The 640 starts to appear stretching modes around 2940 mode.10,11 SC36,13 to Si-H wagging or rocking It gradually diminin and can be clearly seen in SC96 and SC100.”

  Chew 等 - 2002 - Hydrogenated amorphous silicon carbide deposition DOI: 10.1063/1.1500418
• 2159 cm⁻¹ tillid 1,0

  “Figure 14 shows the changes in the silane peak at 2159 The silane peak did not show any intensity for neat asphalt and LPs of CRMA binders interacted at 160-10 or 160-50.”

  Effect of used motor oil as a rejuvenator on crumb rubber modifier’s released components to asphalt binder DOI: 10.1177/1477760620918600
• 2300 cm⁻¹ tillid 1,0

  “IR-spectra of the meso-PS films the absorption between 2300 Let us consider the possible mechanisms of the formation of cm(cid:2)1 and 2000 appears due to Si-H valence vibrations.”

  Gorbanyuk 等 - 2006 - Porous silicon microstructure and composition char DOI: 10.1016/j.tsf.2005.08.188
• 490 cm⁻¹ tillid 1,0

  “(cm(cid:2)2) K Reference Bond Mode Wavenumber (cm(cid:2)1) symmetric stretching 490 - [15] Si-N N-Si3 Si-H Si-H wag-rocking”

  Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers DOI: 10.1016/j.solmat.2011.09.052