Silicon silicon — FTIR absorption peaks and assignments

Quick answer

Silicon silicon is usually assigned by looking for a recurring cluster of characteristic peaks rather than one exact textbook number. The table below shows where the literature most often places this group in FTIR, ranked by accumulated evidence.

Characteristic FTIR peaks for Silicon silicon

Showing the 30 best-supported peaks of 44 total for Silicon silicon.

Possible materials

Spectrum logic

A functional-group assignment becomes more reliable when several expected bands appear together. Use this page to find the strongest-supported peaks, then confirm that the same sample exhibits a coherent pattern rather than a single isolated hit.

Real-world usage

These pages are useful for unknown material analysis, peak explanation in reports, polymer troubleshooting, and verifying whether a candidate material family is chemically plausible.

Common mistakes

• Using one functional-group page as a complete material verdict without checking the rest of the spectrum.
• Assuming the strongest band is always the most diagnostic one.
• Forgetting that processing, additives, aging, and mixtures can shift or broaden expected peaks.

Verification advice

Use DSC, GC-MS, or TGA when several material families share similar bands or when mixture effects make the FTIR assignment uncertain.

Literatur hinter diesen Zuweisungen

• 480 cm⁻¹ Vertrauen 1,0

  “Before annealing treatments, some signature of the presence of Si-Si bonds (weak band centered at 480 cm-1 assigned to the amorphous silicon phase) are present in the spectrum of the as-grown material.”

  Benyahia 等 - 2017 - Evolution of Optical and Structural Properties of DOI: 10.4028/www.scientific.net/JNanoR.49.163
• 980 cm⁻¹ Vertrauen 1,0

  “7 (a) Typical absorption, transmission and reflection spectra of cm(cid:3)1 for 30and 60-s Si-Si peaks are at 979.56 and 943.58 vertical SiNWs by electroless process.”

  Synthesis and Characterization of Silicon Nanowires by Electroless Etching DOI: 10.1007/s11665-018-3179-z
• 480 cm⁻¹ Vertrauen 1,0

  “In Raman spectrum, for amorphous phase and crystalline phase, the Si-Si TO phonon mode occurs at about 480 cm-1 and 520 cm-1, respectively.”

  Chen 等 - 2014 - Effect of Deposition Power on the Structure Proper DOI: 10.4028/www.scientific.net/AMM.442.116
• 400 cm⁻¹ Vertrauen 1,0

  “The weak absorption in the near infrared region (~400 cm-1) of three compounds is ascribed to Si-Si bonds.”

  Synthesis, characterization and properties of diamidodisilanes and azocyclosilane DOI: 10.1360/982004-590
• 464 cm⁻¹ Vertrauen 1,0

  “Since in GaAs the 464 cm-1 peak corresponds to the longitudinal stretching mode of the pair [5] one can imagine that when Al atoms substitute Ga atoms nearest to the SiAs cation sites the Si-Si bond will become somewhat weaker due to an Al-”

  Kaczor 等 - 1995 - Silicon-related local vibrational mode absorption DOI: 10.4028/www.scientific.net/MSF.196-201.1091
• 411 cm⁻¹ Vertrauen 1,0

  “The only difference between FTIR of cm-1 ZnO:Al,N ZnO:Al,N ZnO:Al,N films films films and and and Si Si Si substrate substrate substrate is is is the the the peak peak peak at at at 411 411 411 cm cm that is only seen in the films.”

  Karpyna 等 - 2020 - Raman and Photoluminescence Study of Al,N-Codoped DOI: 10.1002/pssb.201900788.
• 400 cm⁻¹ Vertrauen 1,0

  “The inset is a magnified view of Si-Si peak at the temperature of 400 ºC and 500 ºC Figure 1 shows the Raman spectra of the self-implanted sample annealed at different”

  Lu 等 - 2013 - Red Light Emission from Silicon Created by Self-io DOI: 10.4028/www.scientific.net/AMM.320.109
• 614 cm⁻¹ Vertrauen 1,0

  “LLM confirmed rule peak-group candidate”

  Ion beam induced modification and nanostructures formation in thin SiC/Pd films on c-Si substrate DOI: 10.1016/j.nimb.2021.01.018