Silicon hydride — FTIR absorption peaks and assignments

Quick answer

Silicon hydride is usually assigned by looking for a recurring cluster of characteristic peaks rather than one exact textbook number. The table below shows where the literature most often places this group in FTIR, ranked by accumulated evidence.

Characteristic FTIR peaks for Silicon hydride

Showing the 30 best-supported peaks of 108 total for Silicon hydride.

Spectrum logic

A functional-group assignment becomes more confident when several expected bands appear together. Use this page to find the strongest-supported peaks, then confirm that the same sample exhibits a coherent pattern rather than a single isolated hit.

Real-world usage

These pages are useful for unknown material analysis, peak explanation in reports, polymer troubleshooting, and verifying whether a candidate material family is chemically plausible.

Common mistakes

• Using one functional-group page as a complete material verdict without checking the rest of the spectrum.
• Assuming the strongest band is always the most diagnostic one.
• Forgetting that processing, additives, aging, and mixtures can shift or broaden expected peaks.

Verification advice

Use DSC, GC-MS, or TGA when several material families share similar bands or when mixture effects make the FTIR assignment uncertain.

Literature behind these assignments

• 470 cm⁻¹ confidence 1.0

  “cm-1 The absorption bands centered at around 470, 820, 1170, 2180, and 3300 can be assigned to the Si-N symmetric stretching, Si-N asymmetric stretching, N-H bending, Si-H stretching, and NH stretching modes, respectively.”

  Benyahia 等 - 2017 - Evolution of Optical and Structural Properties of DOI: 10.4028/www.scientific.net/JNanoR.49.163
• 2110 cm⁻¹ confidence 1.0

  “The band at 2110 corresponds to stretching vibrations of Si-H bonds [44,45].”

  Mechanical properties, chemical analysis and evaluation of antimicrobial response of Si-DLC coatings fabricated on AISI 316 LVM substrate by a multi-target DC-RF magnetron sputtering method for potential biomedical applications DOI: 10.1016/j.apsusc.2017.03.223
• 3660 cm⁻¹ confidence 1.0

  “cm-1) cm-1) 3660 and Si-H peak (observed at 2160 417 (1997) relative to Si-O-Si peak as a function of film thickness.”

  Bougharouat 等 - 2011 - Plasma polymerization of TEOS for QCM-based VOC va DOI: 10.1051/epjap/2011110144
• 640 cm⁻¹ confidence 1.0

  “118 Materials Engineering and Mechanical Automation cm-1, C Further, H content ( ) can be calculated according to the absorption intensity at about 640 H * C R which is due to the Si-H wagging mode [9].”

  Chen 等 - 2014 - Effect of Deposition Power on the Structure Proper DOI: 10.4028/www.scientific.net/AMM.442.116
• 2940 cm⁻¹ confidence 1.0

  “The 640 starts to appear stretching modes around 2940 mode.10,11 SC36,13 to Si-H wagging or rocking It gradually diminin and can be clearly seen in SC96 and SC100.”

  Chew 等 - 2002 - Hydrogenated amorphous silicon carbide deposition DOI: 10.1063/1.1500418
• 2159 cm⁻¹ confidence 1.0

  “Figure 14 shows the changes in the silane peak at 2159 The silane peak did not show any intensity for neat asphalt and LPs of CRMA binders interacted at 160-10 or 160-50.”

  Effect of used motor oil as a rejuvenator on crumb rubber modifier’s released components to asphalt binder DOI: 10.1177/1477760620918600
• 2300 cm⁻¹ confidence 1.0

  “IR-spectra of the meso-PS films the absorption between 2300 Let us consider the possible mechanisms of the formation of cm(cid:2)1 and 2000 appears due to Si-H valence vibrations.”

  Gorbanyuk 等 - 2006 - Porous silicon microstructure and composition char DOI: 10.1016/j.tsf.2005.08.188
• 490 cm⁻¹ confidence 1.0

  “(cm(cid:2)2) K Reference Bond Mode Wavenumber (cm(cid:2)1) symmetric stretching 490 - [15] Si-N N-Si3 Si-H Si-H wag-rocking”

  Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers DOI: 10.1016/j.solmat.2011.09.052