Silicon silicon — FTIR absorption peaks and assignments
These are the characteristic FTIR wavenumbers where Silicon silicon tends to absorb, compiled from published literature and ranked by supporting evidence. Each assignment is traceable to a source (DOI) and cross-validated against our 130,000+ reference spectra and knowledge graph.
Backed by 8 cited sources
Răspuns rapid
Silicon silicon is usually assigned by looking for a recurring cluster of characteristic peaks rather than one exact textbook number. The table below shows where the literature most often places this group in FTIR, ranked by accumulated evidence.
Characteristic FTIR peaks for Silicon silicon
| Număr de undă (cm⁻¹) | Fapte suport | Surse citate | Încredere maximă |
|---|---|---|---|
| 520 | 4 | 4 | 1,0 |
| 2000 | 2 | 2 | 1,0 |
| 400 | 2 | 2 | 1,0 |
| 480 | 2 | 2 | 1,0 |
| 1255 | 1 | 1 | 1,0 |
| 1030 | 1 | 1 | 1,0 |
| 612 | 1 | 1 | 1,0 |
| 615 | 1 | 1 | 1,0 |
| 773 | 1 | 1 | 1,0 |
| 1050 | 1 | 1 | 1,0 |
| 768 | 1 | 1 | 1,0 |
| 1600 | 1 | 1 | 1,0 |
| 519 | 1 | 1 | 1,0 |
| 460 | 1 | 1 | 1,0 |
| 976 | 1 | 1 | 1,0 |
| 2013 | 1 | 1 | 1,0 |
| 618 | 1 | 1 | 1,0 |
| 962 | 1 | 1 | 1,0 |
| 728 | 1 | 1 | 1,0 |
| 744 | 1 | 1 | 1,0 |
| 762 | 1 | 1 | 1,0 |
| 788 | 1 | 1 | 1,0 |
| 605 | 1 | 1 | 1,0 |
| 611 | 1 | 1 | 1,0 |
| 1061 | 1 | 1 | 1,0 |
| 452 | 1 | 1 | 1,0 |
| 787 | 1 | 1 | 1,0 |
| 461 | 1 | 1 | 1,0 |
| 518 | 1 | 1 | 1,0 |
| 430 | 1 | 1 | 1,0 |
Showing the 30 best-supported peaks of 44 total for Silicon silicon.
Materiale posibile
Logica spectrului
O atribuire a unui grup funcțional devine mai fiabilă atunci când mai multe benzi așteptate apar împreună. Folosiți această pagină pentru a găsi vârfurile cu cel mai puternic suport, apoi confirmați că aceeași probă prezintă un model coerent, nu un singur hit izolat.
Utilizare în condiții reale
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Greșeli comune
- Utilizarea unei pagini de grup funcțional ca verdict complet al materialului fără a verifica restul spectrului.
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Sfat de verificare
Utilizați DSC, GC-MS sau TGA atunci când mai multe familii de materiale împărtășesc benzi similare sau când efectele de amestec fac incertă atribuirea FTIR.
Literatura din spatele acestor atribuiri
-
480 cm⁻¹ încredere 1,0
“Before annealing treatments, some signature of the presence of Si-Si bonds (weak band centered at 480 cm-1 assigned to the amorphous silicon phase) are present in the spectrum of the as-grown material.”
Benyahia 等 - 2017 - Evolution of Optical and Structural Properties of DOI: 10.4028/www.scientific.net/JNanoR.49.163 -
980 cm⁻¹ încredere 1,0
“7 (a) Typical absorption, transmission and reflection spectra of cm(cid:3)1 for 30and 60-s Si-Si peaks are at 979.56 and 943.58 vertical SiNWs by electroless process.”
Synthesis and Characterization of Silicon Nanowires by Electroless Etching DOI: 10.1007/s11665-018-3179-z -
480 cm⁻¹ încredere 1,0
“In Raman spectrum, for amorphous phase and crystalline phase, the Si-Si TO phonon mode occurs at about 480 cm-1 and 520 cm-1, respectively.”
Chen 等 - 2014 - Effect of Deposition Power on the Structure Proper DOI: 10.4028/www.scientific.net/AMM.442.116 -
400 cm⁻¹ încredere 1,0
“The weak absorption in the near infrared region (~400 cm-1) of three compounds is ascribed to Si-Si bonds.”
Synthesis, characterization and properties of diamidodisilanes and azocyclosilane DOI: 10.1360/982004-590 -
464 cm⁻¹ încredere 1,0
“Since in GaAs the 464 cm-1 peak corresponds to the longitudinal stretching mode of the pair [5] one can imagine that when Al atoms substitute Ga atoms nearest to the SiAs cation sites the Si-Si bond will become somewhat weaker due to an Al-”
Kaczor 等 - 1995 - Silicon-related local vibrational mode absorption DOI: 10.4028/www.scientific.net/MSF.196-201.1091 -
411 cm⁻¹ încredere 1,0
“The only difference between FTIR of cm-1 ZnO:Al,N ZnO:Al,N ZnO:Al,N films films films and and and Si Si Si substrate substrate substrate is is is the the the peak peak peak at at at 411 411 411 cm cm that is only seen in the films.”
Karpyna 等 - 2020 - Raman and Photoluminescence Study of Al,N-Codoped DOI: 10.1002/pssb.201900788. -
400 cm⁻¹ încredere 1,0
“The inset is a magnified view of Si-Si peak at the temperature of 400 ºC and 500 ºC Figure 1 shows the Raman spectra of the self-implanted sample annealed at different”
Lu 等 - 2013 - Red Light Emission from Silicon Created by Self-io DOI: 10.4028/www.scientific.net/AMM.320.109 -
614 cm⁻¹ încredere 1,0
“LLM confirmed rule peak-group candidate”
Ion beam induced modification and nanostructures formation in thin SiC/Pd films on c-Si substrate DOI: 10.1016/j.nimb.2021.01.018
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