Silicon silicon — FTIR absorption peaks and assignments
These are the characteristic FTIR wavenumbers where Silicon silicon tends to absorb, compiled from published literature and ranked by supporting evidence. Each assignment is traceable to a source (DOI) and cross-validated against our 130,000+ reference spectra and knowledge graph.
Backed by 8 cited sources
Ātra atbilde
Silicon silicon is usually assigned by looking for a recurring cluster of characteristic peaks rather than one exact textbook number. The table below shows where the literature most often places this group in FTIR, ranked by accumulated evidence.
Characteristic FTIR peaks for Silicon silicon
| Vilnu skaitlis (cm⁻¹) | Atbalstošie fakti | Citētie avoti | Augstākā pārliecība |
|---|---|---|---|
| 520 | 4 | 4 | 1,0 |
| 2000 | 2 | 2 | 1,0 |
| 400 | 2 | 2 | 1,0 |
| 480 | 2 | 2 | 1,0 |
| 1255 | 1 | 1 | 1,0 |
| 1030 | 1 | 1 | 1,0 |
| 612 | 1 | 1 | 1,0 |
| 615 | 1 | 1 | 1,0 |
| 773 | 1 | 1 | 1,0 |
| 1050 | 1 | 1 | 1,0 |
| 768 | 1 | 1 | 1,0 |
| 1600 | 1 | 1 | 1,0 |
| 519 | 1 | 1 | 1,0 |
| 460 | 1 | 1 | 1,0 |
| 976 | 1 | 1 | 1,0 |
| 2013 | 1 | 1 | 1,0 |
| 618 | 1 | 1 | 1,0 |
| 962 | 1 | 1 | 1,0 |
| 728 | 1 | 1 | 1,0 |
| 744 | 1 | 1 | 1,0 |
| 762 | 1 | 1 | 1,0 |
| 788 | 1 | 1 | 1,0 |
| 605 | 1 | 1 | 1,0 |
| 611 | 1 | 1 | 1,0 |
| 1061 | 1 | 1 | 1,0 |
| 452 | 1 | 1 | 1,0 |
| 787 | 1 | 1 | 1,0 |
| 461 | 1 | 1 | 1,0 |
| 518 | 1 | 1 | 1,0 |
| 430 | 1 | 1 | 1,0 |
Showing the 30 best-supported peaks of 44 total for Silicon silicon.
Iespējamie materiāli
Spektra loģika
Funkcionālās grupas piešķiršana kļūst ticamāka, ja kopā parādās vairākas sagaidāmās joslas. Izmantojiet šo lapu, lai atrastu spēcīgāk atbalstītos pīķus, pēc tam apstipriniet, ka tas pats paraugs uzrāda saskaņotu modeli, nevis vienu izolētu trāpījumu.
Reālās pasaules izmantošana
Šīs lapas ir noderīgas nezināmu materiālu analīzei, pīķu skaidrošanai pārskatos, polimēru problēmu risināšanai un pārbaudei, vai kandidātmateriālu grupa ir ķīmiski ticama.
Biežākās kļūdas
- Izmantojot vienu funkcionālās grupas lapu kā pilnīgu materiāla spriedumu, nepārbaudot pārējo spektru.
- Pieņemot, ka spēcīgākā josla vienmēr ir visdiagnostiskākā.
- Aizmirstot, ka apstrāde, piedevas, novecošana un maisījumi var novirzīt vai paplašināt paredzamos pīķus.
Verifikācijas padoms
Izmantojiet DSC, GC-MS vai TGA, kad vairākas materiālu grupas dalās ar līdzīgām joslām vai kad maisījumu efekti padara FTIR piešķīrumu nenoteiktu.
Literatūra aiz šiem piešķīrumiem
-
480 cm⁻¹ pārliecība 1,0
“Before annealing treatments, some signature of the presence of Si-Si bonds (weak band centered at 480 cm-1 assigned to the amorphous silicon phase) are present in the spectrum of the as-grown material.”
Benyahia 等 - 2017 - Evolution of Optical and Structural Properties of DOI: 10.4028/www.scientific.net/JNanoR.49.163 -
980 cm⁻¹ pārliecība 1,0
“7 (a) Typical absorption, transmission and reflection spectra of cm(cid:3)1 for 30and 60-s Si-Si peaks are at 979.56 and 943.58 vertical SiNWs by electroless process.”
Synthesis and Characterization of Silicon Nanowires by Electroless Etching DOI: 10.1007/s11665-018-3179-z -
480 cm⁻¹ pārliecība 1,0
“In Raman spectrum, for amorphous phase and crystalline phase, the Si-Si TO phonon mode occurs at about 480 cm-1 and 520 cm-1, respectively.”
Chen 等 - 2014 - Effect of Deposition Power on the Structure Proper DOI: 10.4028/www.scientific.net/AMM.442.116 -
400 cm⁻¹ pārliecība 1,0
“The weak absorption in the near infrared region (~400 cm-1) of three compounds is ascribed to Si-Si bonds.”
Synthesis, characterization and properties of diamidodisilanes and azocyclosilane DOI: 10.1360/982004-590 -
464 cm⁻¹ pārliecība 1,0
“Since in GaAs the 464 cm-1 peak corresponds to the longitudinal stretching mode of the pair [5] one can imagine that when Al atoms substitute Ga atoms nearest to the SiAs cation sites the Si-Si bond will become somewhat weaker due to an Al-”
Kaczor 等 - 1995 - Silicon-related local vibrational mode absorption DOI: 10.4028/www.scientific.net/MSF.196-201.1091 -
411 cm⁻¹ pārliecība 1,0
“The only difference between FTIR of cm-1 ZnO:Al,N ZnO:Al,N ZnO:Al,N films films films and and and Si Si Si substrate substrate substrate is is is the the the peak peak peak at at at 411 411 411 cm cm that is only seen in the films.”
Karpyna 等 - 2020 - Raman and Photoluminescence Study of Al,N-Codoped DOI: 10.1002/pssb.201900788. -
400 cm⁻¹ pārliecība 1,0
“The inset is a magnified view of Si-Si peak at the temperature of 400 ºC and 500 ºC Figure 1 shows the Raman spectra of the self-implanted sample annealed at different”
Lu 等 - 2013 - Red Light Emission from Silicon Created by Self-io DOI: 10.4028/www.scientific.net/AMM.320.109 -
614 cm⁻¹ pārliecība 1,0
“LLM confirmed rule peak-group candidate”
Ion beam induced modification and nanostructures formation in thin SiC/Pd films on c-Si substrate DOI: 10.1016/j.nimb.2021.01.018
See Silicon silicon in your own spectrum
Augšupielādējiet savu FTIR spektru un dažu sekunžu laikā iegūstiet pilnu interpretācijas ziņojumu — maksimumu piešķīrumus ar literatūras atsaucēm, bibliotēku saskaņošanu un pārliecības līmeņa pierādījumu ķēdi.