Silicon nitrogen — FTIR absorption peaks and assignments
These are the characteristic FTIR wavenumbers where Silicon nitrogen tends to absorb, compiled from published literature and ranked by supporting evidence. Each assignment is traceable to a source (DOI) and cross-validated against our 130,000+ reference spectra and knowledge graph.
Backed by 4 cited sources
Characteristic FTIR peaks for Silicon nitrogen
Literatura sa likod ng mga pagtatalagang ito
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450 cm⁻¹ kumpiyansa 1.0
“Attributed to Si-N stretching due to silicon nitride.”
Ouadah 等 - 2022 - Optical and photoelectrochemical properties of nit DOI: 10.1080/2374068X.2021.1890420 -
490 cm⁻¹ kumpiyansa 0.9
“Explicit assignment in text.”
Hallam 等 - 2012 - Effect of PECVD silicon oxynitride film compositio DOI: 10.1016/j.solmat.2011.09.052 -
1162 cm⁻¹ kumpiyansa 0.9
“Explicit assignment: 'Si-N vibration 1162'”
Wang 等 - 2022 - Porous Silicon Oxycarbonitride Ceramics with Palla DOI: 10.3390/polym14173470 -
1075 cm⁻¹ kumpiyansa 0.7
“Narrow peak at about 1075, dominant FTIR feature related to Si-O/Si-N.”
del Prado 等 - 1999 - Effect of substrate temperature in SiOxNy films de DOI: 10.1116/1.582039
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